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Solid phase epitaxy (SPE) has been widely employed for various thin-film materials, making it valuable for industrial applications due to its scalability. In complex oxides, SPE has been limited to a few materials because of the challenges in maintaining stoichiometric control during growth, particularly when volatile phases are present at high temperatures. Here, we investigate the impact of encapsulation layers on the SPE of complex oxides, using SrRuO3 (SRO) as a model system. An amorphous SRO layer was deposited on a SrTiO3 (STO) substrate, followed by the transfer of a single-crystalline STO membrane as an encapsulation layer in order to suppress the evaporation of volatile species (RuO2) during the SPE process. Whereas both encapsulated and unencapsulated SRO layers were successfully crystallized, the unencapsulated films suffered a substantial loss of Ru ions—exceeding 20%—compared to their encapsulated counterparts. This loss of Ru ions led to a loss of metallicity in the unencapsulated SRO layers, whereas the encapsulated layers retained their metallic ferromagnetic properties. This study demonstrates that the encapsulation provided by oxide membranes effectively suppresses stoichiometric loss during SPE, presenting a new strategy in stabilizing a broader class of functional oxides as epitaxial thin films. 

Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High-quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS 3 and its Ruddlesden–Popper phase Ba 3 Zr 2 S 7 by a flux method. X-ray diffraction analyses showed the space group of Pnma with lattice constants of a = 7.056(3) Å, b = 9.962(4) Å, and c = 6.996(3) Å for BaZrS 3 and P 4 2 / mnm with a = 7.071(2) Å, b = 7.071(2) Å, and c = 25.418(5) Å for Ba 3 Zr 2 S 7 . Rocking curves with full width at half maximum of 0.011° for BaZrS 3 and 0.027° for Ba 3 Zr 2 S 7 were observed. Pole figure analysis, scanning transmission electron microscopy images, and electron diffraction patterns also establish the high quality of the grown crystals. The octahedral tilting in the corner-sharing octahedral network is analyzed by extracting the torsion angles.